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Krunter Future Tech (Dongguan) Co., Ltd.

Krunter Future Tech. (Dongguan) Co., Ltd.

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Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations

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Krunter Future Tech (Dongguan) Co., Ltd.
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China Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations wholesale
  • China Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations wholesale
  • China Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations wholesale
  • China Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations wholesale

Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations
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Brand Name :Krunter
Model Number :KES650H12A8L-2M
Moisture Sensitive :YES
Output Current :60A
Dimensions :25mm x 50mm x 10mm
Close :No Shutdown
Maximum Operating Temperature :150°C
Input Range :4.5V~5.5V
Collector-Emitter Voltage :600V
Number Of Pins :7
Lead Times :Immediately Shipment
Contact Resistance :30mΩ
Thermal Resistance :0.5°C/W
Peak Repetitive Reverse :100-1600V
Application :Power Conversion
Qualification :Industrial
Organization :512 M x 16
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KES650H12A8L-2M

  • High power density with Trench FS IGBT technology

  • Low VCE(sat)

  • Parallel operation enabled ; symmetrical design & positive temperature coefficient

  • Low inductance design

  • Integrated NTC temperature sensor

  • Isolated baseplate using DBC technology

  • Compact and robust design with molded terminals

Internal Circuit Diagram

Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations

Specification Parameters

TYPE VBR
Volts		 VGS(th)
Volts		 ID
Amps		 RDS(on)
mΩ		 IDSS
uA		 TJ Rth(JC)
K/W		 Ptot
Watts		 Circuit Package Technology
KES400H12A8L-2M 1200V 3.2V 400A 3.7mΩ 200uA 175℃ 0.064 2230W 2 Pack ECDUAL3 SIC MOSFET
KES650H12A8L-2M 1200V 3.2V 650A 2.2mΩ 200uA 175℃ 0.064 3200W 2 Pack SIC MOSFET


Compact and Lightweight IGBT Module KES650H12A8L-2M for Space-Saving Installations

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